View AWTS100BAN_4288123.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SPECIFICATION
ITEM MODEL CUSTOMER NEW WHITE SIDE VIEW LED AWTS100BAN
Customer
Approved by Approved by Approved by
/
/
/
Supplier
Drawn by Checked by Approved by
/
/
/
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
Contents
1. 2. 3. 4. 5. 6. 7. 8. 9.
Features Application Absolute Maximum Ratings Electro-Optical Characteristics CIE Chromaticity Diagram Characteristic Diagram Reliability Precautions Soldering Profile
02 02 03 03 04 05 08 09 10 11 12 13 14
10. Outline Dimension 11. Packing 12. Reel Packing Structure 13. History
SSC-QP-7-03-44()
1
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
1. Features
The High Gamut LED Package: SMT Solderability Dimension : 3.7 x 0.9 x 0.4 (mm) Low Thermal Resistance RoHS Compliant, Lead Free Suitable for Small Applications Own Patent Reserved AWTS100BAN is Very Useful Side View LED in Back Light Unit Application
2. Applications
Flat Backlighting (LCD, Display) Mobile Phone, Camera, PDA, Notebook Coupling into Light Guide Panel AV Systems
SSC-QP-7-03-44()
2
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN (Ta = 25C) Symbol Value 120 30 100 5 -30 ~ +85 -40 ~ +100 125 Unit mW mA mA V

3. Absolute Maximum Ratings
Parameter Power Dissipation Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Junction Temperature
*1 *2
Pd*1 IF IFM*2 VR Topr Tstg Tj
C C C
Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product.
IFM conditions : Pulse width TW 0.1ms, Duty ratio 1/10
4. Electro-Optical Characteristics
Item Rank Y Forward Voltage Reverse Current Rank I8 Luminous Intensity*1 Rank I9 Rank J0 Rank J1 Viewing Angle
*2
(Ta = 25C) Condition Min 2.7 3.0 3.3 800 900 1000 1100 21/2 Typ 120 0.264 0.295 0.295 0.311 0.315 0.248 0.287 0.276 Max 3.0 3.3 3.7 50 900 1000 1100 1200 mcd A V Unit
Symbol Rank Z Rank A
VF IR
IF = 20 mA VR = 5 V
IV
IF = 20 mA
IF = 20 mA
Rank b Color Coordinates
*3
x y x y
IF = 20 mA
Rank e
*1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is 10%. *2 1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. *3 Measurement Uncertainty of the Color Coordinates 0.01 Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul Semiconductor.
SSC-QP-7-03-44()
3
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
5. CIE Chromaticity Diagram
0.9 0.8 0.7 0.6
520 515 525530 535 540 510 545 550 555 505 560 565 570 500 575 580 585 590 495 595 600 610 620 490 630 830 485 480 475 470 460
0.36 0.34 0.32
f e
y Coord.
0.4 0.3 0.2 0.1
y Coord.
0.5
0.30 0.28 0.26 0.24 0.22 0.24
b
0.0 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.26
0.28
0.30
0.32
0.34
0.36
x Coor d.
x Coor d.
Luminous Intensity Ranking by Color Coordinates Ranking by Luminous Intensity RANK I8 I9 J0 J1
* The Checked ranks are available
b Max 900 1000 1100 1200 mcd Unit
e
f
Min 800 900 1000 1100
Color Rank b
x
0.264 0.280 0.296 0.287
(IF = 20 mA, Ta = 25C)
e
y
0.267 0.248 0.276 0.295
f
y
0.276 0.294 0.315 0.295
x
0.296 0.311 0.307 0.287
x
0.311 0.330 0.330 0.307
y
0.294 0.318 0.339 0.315
SSC-QP-7-03-44()
4
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
6. Characteristic Diagram
Forward Current vs. Forward Voltage Intensity vs. Forward Current
Ta = 25 C
O
1800 1600
Ta = 25 C
O
Forward Current [mA]
10
Intensity [mcd]
1400 1200 1000 800 600 400 200 0 0 5 10 15 20 25 30 35
1
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Forward Voltage [V]
Forward Current [mA]
Forward Current vs. Ambient Temperature
Radiation Diagram
30
1.0
x Coord. y Coord.
Forward current [mA]
25
15 10 5 0 -30 -15
Intensity
0 15 30 45 60 75 90
o
20
0.5
0.0 -100 -80 -60 -40 -20 0 20 40 60 80 100
Ambient temperature [ C]
Theta
SSC-QP-7-03-44()
5
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
Color Coordinate vs. Forward Current
Spectrum
0.266
Ta = 25 C
O
30 mA
Ta = 25 C IF = 20 mA
Intensity [%]
O
0.265
y Coord.
0.264
1 mA
0.263
0.274
0.276
0.278
0.280
400
500
600
700
800
x Coord.
Wavelength [nm]
Forward Voltage vs. Ambient Temperature
Color Coordinate vs. Ambient Temperature
1.06
0.280
VF / VF [25 C]
IF = 20 mA
1.04 1.02
IF = 20 mA
0.278
-30 C
o
O
y Coord.
0.276
1.00 0.98 0.96 0.94 -45 -30 -15
25 C
o
0.274
0.272
85 C
0 15 30 45 60 75
o
o
90
0.270
0.282
0.284
0.286
0.288
0.290
Ambient Temperature [ C]
x Coord.
SSC-QP-7-03-44()
6
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
Relative Luminosity vs. Ambient Temperature
Allowable Forward Current vs. Duty Ratio
1.2
120
Allowable Forward Current [mA]
Ta = 25 C
O
Iv / Iv [25 C]
1.1 1.0 0.9 0.8 0.7 -45 -30 -15 0 15 30 45 60 o 75 90 Ambient Temperature [ C]
100 80 60 40 20 1 10 100
o
Duty Ratio [%]
SSC-QP-7-03-44()
7
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
7. Reliability
(1) TEST ITEMS AND RESULTS
TEST ITEM Life Test 1 Life Test 2 Thermal Shock High Temperature Life Test Low Temperature Life Test High Temperature Storage Low Temperature Storage High Humidity Heat Life Test*1 Humidity Heat Load Resistance to Soldering Heat Solder ability (Reflow Soldering) Temperature Cycle Moisture Resistance Cycle Test conditions Note 1000 hrs. 500 hr 20 cycle 1000 hrs. 1000 hrs. 1000 hrs. 1000 hrs. 500 hrs. 1000 hrs. 2 times 1 time over 95% 100 cycle 10 cycle Number of Damaged 0/20 0/20 0/50 0/20 0/20 0/50 0/50 0/20 0/50 0/50 0/50 0/50 0/50 Reference EIAJ ED-4701 100 101 EIAJ ED-4701 100 101 EIAJ ED-4701 300 307 EIAJ ED-4701 200 201 EIAJ ED-4701 200 202 EIAJ ED-4701 100 102 EIAJ ED-4701 100 103 EIAJ ED-4701 301 302 EIAJ ED-4701 303 EIAJ ED-4701 100 105 EIAJ ED-4701 200 203
Ta = 25C; IF = 20 mA
Ta = 25C; IF = 30 mA
-30C ~ 85C
(30 min) (30 min)
Ta = 85C; IF = 5 mA Ta = - 30C; IF = 20 mA Ta = 100C Ta = - 40C Ta = 60C; RH = 90%, IF = 20 mA
Ta = 60C; RH = 90% Tsld = 260C, 10 sec Pre treatment; 30C, 70%, 168 hr Tsld = 2155C, 3 sec
(Lead Solder)
(30 min)
- 40C ~ 25C ~ 100C ~ 25C
(5 min) (30 min) (5 min)
25C ~ 65C ~ - 10C RH = 90%, 24 hr / 1 cycle
(2) CRITERIA FOR JUDGING THE DAMAGE
Item Symbol Test Condition Criteria for Judgment Min. Forward Voltage Reverse Current Luminous Intensity
U.S.L. : Upper Standard Level,
Max. U.S.L x 1.2 U.S.L x 2.0 -
VF IR IV
L.S.L. : Lower Standard Level,
IF = 20 mA VR = 5 V IF = 20 mA
L.S.L x 0.5
SSC-QP-7-03-44()
8
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
8. Precautions
(1) Storage conditions
Keep the product in a dry box or a desiccator with a desiccant in order to prevent moisture absorption. a. Keep it at a temperature in the range from 5C to 30C and at a humidity of less than 60% RH. In case of being stored for more than 3 months, the product should be sealed with Nitrogen gas.
(2) After opening the package
When soldering, this could result in a decrease of the photoelectric effect or light intensity. a. Soldering should be done right after mounting the product. b. Keep the temperature in the range from 5C to 40C and the humidity at less than 30%. Soldering should be done within 7 days after opening the desiccant package. If the product has been exposed for more than 7 days after opening the package or the indicating color of the desiccator changes, the product must be baked at a temperature between 60C and 65C for 10 to 12 hours. An unused and unsealed product should be repacked in a desiccant package and kept sealed in a dry atmosphere.
(3) Precautions for use
Any external mechanical force or excessive vibration should not be applied to the product during cooling after soldering, and it is preferable to avoid rapid cooling. The product should not be mounted on a distorted part of PCB. Gloves or wrist bands for ESD(Electric Static Discharge) should be wore in order to prevent ESD and surge damage, and all devices and equipments must be grounded to the earth.
(4) Miscellaneous
Radiation resistance is not considered. When cleaning the product, any kind of fluid such as water, oil and organic solvent must not be used and IPA(Isopropyl Alcohol) must be used. When using the product, operating current should be settled in consideration of the maximum ambient temperature. Its appearance or specification for improvement is subject to change without notice.
SSC-QP-7-03-44()
9
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
9. Soldering Profile
The LED can be soldered in place using the reflow soldering method.
(1)
Lead solder
Preliminary heating to be at maximum 210C for maximum 2 minutes. Soldering heat to be at maximum 240C for maximum 10 seconds.
280
Device Surface Temperature [ C]
o
240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 135 150 165 180 195
Soldering Times [sec]
(2)
Lead-free solder
Preliminary heating to be at maximum 220C for maximum 2 minutes. Soldering heat to be at maximum 260C for maximum 10 seconds.
280
Device Surface Temperature [ C]
o
240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 135 150 165 180 195
Soldering Times [sec]
(3)
Hand Soldering conditions
Not more than 5 seconds @MAX 300C, under Soldering iron.
SSC-QP-7-03-44()
10
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
10. Outline Dimension
( Tolerance : 0.2, Unit : mm )
MOLD GATE

Cathode
Anode
Recommended solder Pattern
SSC-QP-7-03-44()
11
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN ( Tolerance : 0.2, Unit : mm )
11. Packing
Cathode
Anode
SECTION B-B'
180
+0 -3
15.4 1.0 13 +0.2 -0
2 0.2 60 +1 -0
22 13 0.3 Label
(1) (2) (3) (4)
Quantity: 3500 pcs / Reel Cumulative Tolerance : Cumulative Tolerance / 10 pitches to be 0.2 mm Adhesion Strength of Cover Tape: Adhesion strength to be 0.1 - 0.7 N when the cover tape is turned off from the carrier tape at 10 angle to be the carrier tape Package: P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof Package
SSC-QP-7-03-44()
12
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
12. Reel Packing Structure
Reel
Aluminum Vinyl Bag
Desiccant Humidity indicator
Barcode Label
RANK :
QUANTITY : XXXX LOT NUMBER : XXXXXXXX SSC PART NUMBER : XXXXXXXX
SEOUL
TUV
Outer Box Structure
XXX
142 (mm)
TYPE SIZE (mm) a c b 245 220 142 7inch 245 220 80
MADE IN KOREA
AWTS100BAN X
Acriche
RoHS
Semiconductor EcoLight
Material : Paper(SW3B(B))
245 (mm)
Lot Number
The lot number is composed of the following characters;
220 (mm)
AWTS100B
Symbol Meaning Year Month Day Number Example 8 for 2008, 9 for 2009 01 for Jan., 02 for Feb., 12 for Dec. 01, 02, 03, 04, 05, 27, 28, 29, 30, 31 001, 002, 003, 004, 005, 006, 007

SSC-QP-7-03-44()
13
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00
AWTS100BAN
13. History
Rev. No. 1.00 - The institution of New Spec. Contents Date 2008.06.03
Published by SEOUL SEMICONDUCTOR CO., LTD.
http://www.seoulsemicon.com
148-29, Gasan-Dong, Geumcheon-Gu, Seoul, 153-801. South Korea (c) All Right Reserved.
SSC-QP-7-03-44()
14
SEOUL SEMICONDUCTOR CO., LTD.

▲Up To Search▲

Price & Availability of AWTS100BAN

	To Download AWTS100BAN Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .